IXTQ 82N25P TOP-3

P82N25
Type Designator: IXTQ82N25P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 500 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 82 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 142 nC

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm

Package: TO3P